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AUIRLR120N hexfet ? power mosfet pd - 97624 www.irf.com 1
description specifically designed for automotive applications, this cellular design of hexfet? power mosfets utilizes the latest processing techniques to achieve low on-resistance per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. ? advanced planar technology ? logic-level gate drive ? low on-resistance ? dynamic dv/dt rating ? 175oc operating temperature ? fast switching ? fully avalanche rated ? repetitive avalanche allowed up to tjmax ? lead-free, rohs compliant ? automotive qualified* d-pak AUIRLR120N s d g gds gate drain source absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ v (br)dss 100v r ds(on) max. 0.185 ? i d 10a parameter units i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recovery v/ns t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds (1.6mm from case ) thermal resistance parameter typ. max. units r jc junction-to-case ??? 3.1 r ja junction-to-ambient (pcb mount) ** ??? 50 c/w r ja junction-to-ambient ??? 110 5.0 -55 to + 175 max. 10 7.0 35 300 48 0.32 16 4.8 85 6.0
AUIRLR120N 2 www.irf.com s d g s d g notes: v dd = 25v, starting t j = 25c, l = 4.7mh r g = 25 ? , i as = 6.0a. (see figure 12) repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) ** when mounted on 1" square pcb (fr-4 or g-10 material ) . for recommended footprint and soldering techniques refer to application note #an-994 i sd 6.0a, di/dt 340a/s, v dd v (br)dss , t j 175c pulse width 300s; duty cycle 2%.

static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. t y p. max. units v (br)dss drain-to-source breakdown volta g e 100 ??? ??? v ? v (br)dss / ? t j breakdown volta g e temp. coefficient ??? 0.12 ??? v/c ??? ??? 0.185 ??? ??? 0.225 ? ??? ??? 0.265 v gs(th) gate threshold volta g e1.0???2.0v g fs forward transconductance 3.1 ??? ??? s i dss drain-to-source leaka g e current ??? ??? 25 a ??? ??? 250 i gss gate-to-source forward leaka g e ??? ??? 100 na gate-to-source reverse leaka g e ??? ??? -100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. t y p. max. units q g total gate char g e ??? ??? 20 q gs gate-to-source char g e ??? ??? 4.6 nc q gd gate-to-drain ("miller") char g e ??? ??? 10 t d(on) turn-on dela y time ??? 4.0 ??? t r rise time ??? 35 ??? t d(off) turn-off dela y time ??? 23 ??? ns t f fall time ??? 22 ??? l d internal drain inductance ??? 4.5 ??? between lead, nh 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from packa g e and center of die contact c iss input capacitance ??? 440 ??? c oss output capacitance ??? 97 ??? c rss reverse transfer capacitance ??? 50 ??? pf diode characteristics parameter min. t y p. max. units i s continuous source current ??? ??? 10 (body diode) a i sm pulsed source current ??? ??? 35 ( bod y diode ) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 110 160 ns q rr reverse recovery charge ??? 410 620 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) r ds(on) static drain-to-source on-resistance t j = 25c, i s = 6.0a, v gs = 0v t j = 25c, i f = 6.0a integral reverse p-n junction diode. v ds = 80v conditions r d = 8.2 ?, see fig. 10 v gs = 0v di/dt = 100a/s conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 6.0a v ds = v gs , i d = 250a v ds = 100v, v gs = 0v v ds = 80v, v gs = 0v, t j = 150c mosfet symbol showing the v ds = 25v ? = 1.0mhz, see fig. 5 v gs = 5.0v, see fig. 6 & 13 v dd = 50v i d = 6.0a r g = 11 ?, v gs = 5.0v, v gs = 5.0v, i d = 6.0a v gs = 4.0v, i d = 5.0a v ds = 25v, i d = 6.0a i d = 6.0a v gs = 16v v gs = -16v conditions
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% qualification information ? d-pak msl1 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5 (+/- 2000v) ??? aec-q101-005 moisture sensitivity level rohs compliant yes esd machine model class m2 (+/- 150v) ??? aec-q101-002 human body model class h1a (+/- 500v) ??? aec-q101-001
AUIRLR120N 4 www.irf.com fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 1. typical output characteristics fig 2. typical output characteristics 0.1 1 10 100 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds a 20s pulse width t = 25c j vgs top 15v 12v 10v 8.0v 6.0v 4.0v 3.0v bottom 2.5v 2.5v 0.1 1 10 100 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds a 20s pulse width t = 175c vgs top 15v 12v 10v 8.0v 6.0v 4.0v 3.0v bottom 2.5v 2.5v j 0.1 1 10 100 246810 t = 25c j gs v , gate-to-source voltage (v) d i , drain-to-source current (a) t = 175c j a v = 50v 20s pulse width ds 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) v = 10v gs a i = 10a d
AUIRLR120N www.irf.com 5 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 200 400 600 800 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 3 6 9 12 15 0 5 10 15 20 25 q , total gate charge (nc) g v , gate-to-source voltage (v) gs v = 80v v = 50v v = 20v a for test circuit see figure 13 i = 6.0a d ds ds ds 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 t = 25c j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a t = 175c j 0.1 1 10 100 1 10 100 1000 v , drain-to-source voltage (v) ds i , drain current (a) operation in this area limited by r d ds(on) 10s 100s 1ms 10ms a t = 25c t = 175c single pulse c j
AUIRLR120N 6 www.irf.com fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + - fig 11. maximum effective transient thermal impedance, junction-to-case 0 2 4 6 8 10 25 50 75 100 125 150 175 c i , drain current (amps) d t , case temperature (c) a 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
AUIRLR120N www.irf.com 7 q g q gs q gd v g charge '"( fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 10v 0 40 80 120 160 200 25 50 75 100 125 150 175 j e , single pulse avalanche energy (mj) as a starting t , junction temperature (c) i top 2.4a 4.2a bottom 6.0a d
AUIRLR120N 8 www.irf.com p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit r g v dd ? dv/dt controlled by r g ? driver same type as d.u.t. ? i sd controlled by duty factor "d" ? d.u.t. - device under test d.u.t circuit layout considerations ? low stray inductance ? ground plane ? low leakage inductance current transformer )
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d-pak part marking information
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AUIRLR120N 10 www.irf.com

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tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch
AUIRLR120N www.irf.com 11 ordering information base part number package type standard pack complete part number form quantit y AUIRLR120N d p ak tube 75 AUIRLR120N ta p e and reel 2000 AUIRLR120Ntr tape and reel left 3000 AUIRLR120Ntrl tape and reel right 3000 AUIRLR120Ntrr
AUIRLR120N 12 www.irf.com
unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the ?au? prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. all products are sold subject to ir?s terms and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with ir?s standard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterations is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ir was negligent regarding the design or manufacture of the product. ir products are neither designed nor intended for use in military/aerospace applications or environments unless the ir products are specifically designated by ir as military-grade or ?enhanced plastic.? only products designated by ir as military-grade meet military specifications. buyers acknowledge and agree that any such use of ir products which ir has not designated as military-grade is solely at the buyer?s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir products are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation ?au?. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact ir?s technical assistance center http://www.irf.com/technical-info/ world headquarters: 233 kansas st., el segundo, california 90245 tel: (310) 252-7105

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